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Threshold

**Notes**

**Data Warehousing & DataMinig [10CS755] unit-4**

**Object Tracking in Video Scenes**

**Data Warehousing & DataMinig [10CS755] unit-5&6**

**Advance Computer Architecture [10CS74] unit-4**

**Data Warehousing & DataMinig [10CS755] unit-3**

**Questions**

**Define the term "threshold frequency", in the context of photoelectric emission.**

1 Answer

**Use Einstein's photoelectric equation to show how from this graph, (i) Threshold frequency, and (ii) Planck's constant can be determined.**

0 Answer

**‘Threshold of enclosure’ created by vertical surfaces or series of vertical elementsin an urban plaza, represented by the ratio of height and distance, is given by an angle of ________ degrees (rounded off to one decimal place).**

0 Answer

**In the circuits shown, the threshold voltage of each nMOS transistor is 0.6 V. Ignoring the effect of channel length modulation and body bias, the values of Vout1 and Vout2, respectively, in volts, are:**

0 Answer

**If threshold of hearing has a sound level of zero decibels and the sound le vel in a broadcasting studio is 100 times the threshold of hearing, its value in decibels would be, GATE- Architecture and Planning- 2013**

1 Answer

**The enhancement type MOSFET in the circuit below operates according to the square law. μnCox = 100 μA/V 2 , the threshold voltage (VT) is 500 mV. Ignore channel length modulation. The output voltage Vout is:**

1 Answer

**An aircraft approaches the threshold of a runway strip at a speed of 200 km/h. The pilot decelerates the aircraft at a rate of 1.697 m/s^2 and takes 18 s to exit the runway strip. If the deceleration after exiting the runway is 1 m/s^2, then the distance (in m, up to one decimal place) of the gate position from the location of exit on the runway is ______ (GATE-CIVIL-Engg-2018)**

1 Answer

**Consider a long-channel MOSFET with a channel length 1 μm and width 10 μm. The device parameters are acceptor concentration NA= 5 × 1016 cm-3 , electron mobility μn=800 cm2 /V-s, oxide capacitance/area Cox= 3.45 × 10−7 F/cm2 , threshold voltage VT=0.7 V. The drain saturation current (IDsat) for a gate voltage of 5 V is _____mA (rounded off to two decimal places). [ε0 = 8.854 × 10−14F/cm, εSi = 11.9]**

1 Answer

**Given, Vgs is the gate-source voltage, Vds is the drain source voltage, and Vth is the threshold voltage of an enhancement type NMOS transistor, the conditions for transistor to be biased in saturation are (A) Vgs < Vth ; Vds ≥ Vgs − Vth (B) Vgs > Vth ; Vds ≥ Vgs − Vth (C) Vgs > Vth ; Vds ≤ Vgs − Vth (D) Vgs < Vth ; Vds ≤ Vgs − Vth**

1 Answer

**Consider an instance of TCP’s Additive Increase Multiplicative Decrease (AIMD) algorithm -gate-cse-2012**

1 Answer

**Assuming that transistors M1 and M2 are identical and have a threshold voltage of 1V, the state of transistors M1 and M2 are respectively**

1 Answer

**A random variable X takes values −1 and +1 with probabilities 0.2 and 0.8, respectively. It is transmitted across a channel which adds noise N, so that the random variable at the channel output is Y = X + N. The noise N is independent of X, and is uniformly distributed over the interval [−2 , 2]. The receiver makes a decision X̂ = { −1, if Y ≤ θ +1, ifY > θ where the threshold θ ∈ [−1,1] is chosen so as to minimize the probability of error Pr[X̂ ≠ X]. The minimum probability of error, rounded off to 1 decimal place, is ___________.**

0 Answer

**In the circuit shown, the threshold voltages of the pMOS (|Vtp|) and nMOS (Vtn) transistors are both equal to 1 V. All the transistors have the same output resistance rds of 6 MΩ. The other parameters are listed below: μnCox = 60 μA/V 2 ; ( W L ) nMOS = 5 μpCox = 30 μA/V 2 ; ( W L ) pMOS = 10 μn and μp are the carrier mobilities, and Cox is the oxide capacitance per unit area. Ignoring the effect of channel length modulation and body bias, the gain of the circuit is ____ (rounded off to 1 decimal place).**

1 Answer

**In the circuit shown below, for the MOS transistors -gate-ece-2011**

1 Answer

**A long-channel NMOS transistor is biased in the linear region with 𝑉𝐷𝑆=50 mV and is used as a resistance. Which one of the following statements is NOT correct? Gate-2016**

1 Answer

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