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The channel resistance of an N-channel JFET shown in the figure below is 600 Ω -gate-ece-20111 AnswerThe channel resistance of an N-channel JFET shown in the figure below is 600 Ω -gate-ece-20111 AnswerConsider the following statements for a metal oxide semiconductor field effect transistor (MOSFET): P: As channel length reduces, OFF-state current increases. Q: As channel length reduces, output resistance increases. R: As channel length reduces, 1 AnswerThe slope of a channel in alluvium is 14000 Laceys silt factor is 09 and side slopes are 12H 1V .Find the channel section and maximum discharge which can be allowed to flow in it.0 AnswerDetermine the dimensions of the irrigation canal for the following data BD ratio 37 N 00225 m10 and S 1 4000 side slopes of the channel is H 1V .Also determine the discharge which will be flowing in the channel.0 AnswerThe channel section of uniform thickness 2mm shown in the figure is subjected to a torque of 10 Nm. If it is made of a material with shear m odulus of 25 GPa, the twist per unit length in radians/m is? GATE1 AnswerDesign a channel in alluvial soil by laceys theory for the data given July 2013 Full supply discharge 15m3sec Laceys soil factor 10 Channel side slope H 1V. Find also the bed slope of channel.0 AnswerThe input X to the Binary Symmetric Channel (BSC) shown in the figure is ‘1’ with probability 0.8. The cross-over probability is 1/7. GATE EC 20151 AnswerA long-channel NMOS transistor is biased in the linear region with 𝑉𝐷𝑆=50 mV and is used as a resistance. Which one of the following statements is NOT correct? Gate-20161 AnswerA rectangular open channel has a width of 5 m and a bed slope of 0.001. For a uniform flow of depth 2 m, the velocity is 2 m/s. The Manning’s roughness coefficient for the channel is0 AnswerFour channels are multiplexed using TDM. If each channel sends 100 bytes/second and we multiplex 1 byte per channel, then the bit rate for the link is __________0 AnswerConsider a long-channel MOSFET with a channel length 1 μm and width 10 μm. The device parameters are acceptor concentration NA= 5 × 1016 cm-3 , electron mobility μn=800 cm2 /V-s, oxide capacitance/area Cox= 3.45 × 10−7 F/cm2 , threshold voltage VT=0.7 V. The drain saturation current (IDsat) for a gate voltage of 5 V is _____mA (rounded off to two decimal places). [ε0 = 8.854 × 10−14F/cm, εSi = 11.9]0 AnswerAn n-channel FET having Gate-Source switch-off voltage VGS(OFF) = – 2 V is used to invert a 0 – 5 V square-wave signal as shown. The maximum allowed value of R would be ________ k (up to two decimal places).0 AnswerA MOSFET in saturation has a drain current of 1mA for Vds= 0.5V . GATE EC 20151 AnswerIn the circuit shown, V1 = 0 and V2 = Vdd. The other relevant parameters are mentioned in the figure. Ignoring the effect of channel length modulation and the body effect, the value of Iout is _____mA (rounded off to 1 decimal place).0 AnswerThe correct conditions for which the hydraulically efficient rectangular channel will deliver maximum discharge are P – depth of water is equal to half the breadth of channel Q – depth of water is equal to breadth of channel R – depth of water 1 AnswerDesign a irrigation channel in alluvial soil according to Laceys silt theory for the following data Full supply discharge 10cumecs Laceys silt factor 09 Side slopes of channel 12H 1V.0 AnswerIn the circuit shown, the threshold voltages of the pMOS (|Vtp|) and nMOS (Vtn) transistors are both equal to 1 V. All the transistors have the same output resistance rds of 6 MΩ. The other parameters are listed below: μnCox = 60 μA/V 2 ; ( W L ) nMOS = 5 μpCox = 30 μA/V 2 ; ( W L ) pMOS = 10 μn and μp are the carrier mobilities, and Cox is the oxide capacitance per unit area. Ignoring the effect of channel length modulation and body bias, the gain of the circuit is ____ (rounded off to 1 decimal place).0 AnswerA parabolic grassed water channel 8 m wide at the top and 60 cm deep is laid on a slope of 3%. Assuming the value of ‘n’ in Manning’s formula as 0.04 m-1/3 s, the discharge capacity (in m3 s -1 ) of the channel (rounded off to two decimal places) is ________.0 AnswerA random variable X takes values −1 and +1 with probabilities 0.2 and 0.8, respectively. It is transmitted across a channel which adds noise N, so that the random variable at the channel output is Y = X + N. The noise N is independent of X, and is uniformly distributed over the interval [−2 , 2]. The receiver makes a decision X̂ = { −1, if Y ≤ θ +1, ifY > θ where the threshold θ ∈ [−1,1] is chosen so as to minimize the probability of error Pr[X̂ ≠ X]. The minimum probability of error, rounded off to 1 decimal place, is ___________.0 Answer
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The channel resistance of an N-channel JFET shown in the figure below is 600 Ω -gate-ece-2011
when the full channel thickness (tch) of 10 mµ is available for conduction. The built-in voltage of the gate P+ N junction (Vbi) is -1 V. When the gate to source
voltage (VGS) is 0 V, the channel is depleted by 1 mµ on each side due to the builtin voltage and hence the thickness available for conduction is only 8 m
The channel resistance when VGS = -3 V is
(A) 360Ω (B) 917Ω (C) 1000Ω (D) 3000Ω
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