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## The channel resistance of an N-channel JFET shown in the figure below is 600 Ω -gate-ece-2011

when the full channel thickness (tch) of 10 mµ is available for conduction. The built-in voltage of the gate P+ N junction (Vbi) is -1 V. When the gate to source

voltage (VGS) is 0 V, the channel is depleted by 1 mµ on each side due to the builtin voltage and hence the thickness available for conduction is only 8 m

The channel resistance when VGS = -3 V is

(A) 360Ω (B) 917Ω (C) 1000Ω (D) 3000ΩAsked On2017-07-06 16:44:09 by:prajwalamv

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