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## Consider a long-channel MOSFET with a channel length 1 μm and width 10 μm. The device parameters are acceptor concentration NA= 5 × 1016 cm-3 , electron mobility μn=800 cm2 /V-s, oxide capacitance/area Cox= 3.45 × 10−7 F/cm2 , threshold voltage VT=0.7 V. The drain saturation current (IDsat) for a gate voltage of 5 V is _____mA (rounded off to two decimal places). [ε0 = 8.854 × 10−14F/cm, εSi = 11.9]

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